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Features
* Two Identical Interface Channels * Pre-regulated Smoothed Voltage and a Supply Current up to 50 mA for the Sensors * Data from the Sensors by Current Modulation with a Transmission Rate of 60 kBaud * * * * *
(Transmission Bandwidth 500 kHz) TTL-compatible Input Activates the Sensor Data Output Can be Directly Connected to a Microcontroller Input Operation Supply Voltage Range 5.7V VS 40V ESD Protection According to MIL-STD-883C Test Method 3015.7 High-level EMI Protection
Side-airbag Sensor Dual Interface U6268B
Benefits
* Simple Wiring Thanks to One Common Line for Supply of the Sensor and Data
Transmission from the Sensor to the U6268B * Current Modulation Provides High Noise Immunity for Data Transfer
1. Description
The U6268B is an interface IC for remote automotive sensors. It links the crash sensors in the driver and passenger door with the main airbag unit in the dashboard. Two identical channels supply the external sensors and receive digital information from them via one active wire each. The interface supplies the external sensors with a preregulated smoothed voltage, the external units transmit the digital information back to the interface by current modulation. As the device is designed for safety-critical applications, the highest data transmission security is mandatory. With high immunity against cross coupling between the two channels, the U6268B is tailored for the harsh automotive environment. Figure 1-1. Block Diagram
Data Channel 1 Voltage comparator Channel 1 power supply Data transmission
I/V converter Smoothed voltage regulator
Microcontroller
Crash sensor
Enable Channel 1 Channel 2 Enable Channel 2 Data
Temperature monitor
Short circuit detection Channel 2 power supply Data transmission
Smoothed voltage regulator Voltage comparator I/V converter
Crash sensor
Rev. 4808B-AUTO-09/05
2. Pin Configuration
Figure 2-1. Pinning SO16
GND
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
GND ENABLE1 CLL1 OCM1 OCM2 CLL2
RETURN1 OUT1 VS OUT2 SC RETURN2 GND
ENABLE2 GND
Table 2-1.
Pin 1 2 3 4 5 6 7 8, 9 10 11 12 13 14 15 16
Pin Description
Symbol GND RETURN1 OUT1 VS OUT2 SC RETURN2 GND ENABLE2 CLL2 OCM2 OCM1 CLL1 ENABLE1 GND Function Ground and reference pin Return line of the external unit, internally connected to GND via a line-protection transistor Voltage-stabilized supply output and current-modulation input Supply voltage of the IC Voltage-stabilized supply output and current-modulation input Smooth time constant for slow voltage change at both OUT pins Return line of the external unit, internally connected to GND via a line-protection transistor Ground and reference pin Controls OUT1 voltage ENABLE1 High = OUT1 active, ENABLE1 Low or open = OUT1 switched off Current logic level output (low at high OUT2 current, monitoring via OCM2) Analog current output, representing 1/10 current of OUT2 Analog current output, representing 1/10 current of OUT1 Current logic level output (low at high OUT1 current, monitoring via OCM1) Controls OUT2 voltage ENABLE2 High = OUT2 active, ENABLE1 Low or open = OUT2 switched off Ground and reference pin
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Figure 2-2. Functional Block Diagram
VS Slew rate Vout 5 V/ms at VS rising 10 V/ms at VS falling VS VSC VS ISC-ch
Voltage Regulator
Current mirror ratio IOCMx/IOUTx
VSC + -
IOUT Over current VOUT ON OFF limitation OUTx
SC
+
ISC-dis
IOUT-sink
Temperature protection high T > 165C low T < 145C ENABLEx
High = ENABLE OUTx
Latch Temp Reset Set -+ VOCM-det + VCLL-x IOCM-sink Vret_x + + RETURNx 3 Current limitation -+ VOCM-lim OCMx
4.2 V
Test mode If ENABLE x = 9 V then Temp = high CLLx Temp
Iret-low
GND
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3. Functional Description
3.1 VS
The IC and the external units are powered via the VS pin 4. This pin is connected to the battery via a reverse battery protection diode. An electrolythic capacitor of 22 F smoothes the voltage and absorbs positive and negative transients.
3.2
OUT1, OUT2
OUTx provides a smoothed, very slowly changing supply voltage for the external units and monitors the output current. During normal operating conditions, the OUTx voltage is typically 3V below VS, and changes very slowly with a varying battery voltage in order to suppress disturbances in the data transmission. At low VS (5.7V to 8.5V), the OUTx voltage is typically 0.5V below VS. This voltage difference is reduced in to ensure sufficient supply voltage for the external unit between OUTx and RETURNx. The output current capability is 50 mA. The internal pulldown current at OUTx is typically 3 mA. Figure 3-1. Output Voltage with Tolerances versus Supply Voltage
35 Voutmax 30 25 20 15 9.4 8.2 7.7 5.4 4.9 10 5 0 0 5 10 12.0 5.7 8.5 11.3 15 20 25 30 28.6 35 32.6 40 Voutmin
22.4 21.4
Vout (V)
VS (V)
The data transmission from the external unit to the interface IC is carried out on the same line by varying the current level. The quiescent current consumption of the external unit is about 5 to 15 mA. This current level is interpreted as logic high level at the CLL pin. The external unit can switch on an additional current of 30 mA, interpreted by the interface as logic low. The slope time of the current pulse is approximately 1 s which is suitable for a transmission rate up to 60 kBaud. The necessary transmission bandwidth of greater than 500 kHz between OUTx and OCMx is guaranteed (see "Application Circuit" on page 12). To achieve good current transmission behavior, the dynamic resistance of OUTx may not exceed 12 within the bandwidth range (total of 15 for OUTx and RETURN). The OUTx voltage can be switched off by ENABLEx = LOW to reset the external unit and to reduce power dissipation during fault conditions. The OUT pins are protected against overtemperature and short circuits. A reverse polarity diode at pin VS (pin 4) ensures that no current is fed back to the VBatt system in the case of a short between OUTx and VBatt. A minimum capacity of 33 nF is required at the pins OUTx.
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3.3 ENABLE1, ENABLE2
ENABLEx is a microcontroller-compatible input which switches the related output on or off. * A low or open circuit applied to ENABLEx switches off the related OUTx and RETURNx (high impedance). A sink current at pin OUTx discharges the capacitive load. * A high applied to ENABLEx switches on the related OUTx and RETURNx to supply the external unit.
3.4
OCM1, OCM2
The output current of OUTx is monitored with a transmission factor of 0.1 to the OCMx. With a resistor from OCM to GND, the current is converted to a voltage. The electrical characteristics are specified by ROCM = 750. The CLL-current threshold, the OUT-current limitation and the OUT-current detection can be changed by varying ROCM in a range of 500 to 1 k. Current monitoring enables the device to detect overcurrent conditions at OUTx (short-circuit to GND or RETURNx) and low current conditions at OUTx (short-circuit to VBatt or open load). The internal pull-down current at OUTx creates no OCMx-current. During ENABLE, the minimum voltage at OCMx is the saturation voltage of an internal NPN-transistor with typically 0.1V. The maximum voltage at OCM is limited by an internal clamping diode to 5.3V.
3.5
CLL1, CLL2
The current at pin OUTx is evaluated logically and ready to use for a microcontroller input. With this stage, the logic data transmission from the external unit to the interface is completed. CLLx is the output stage of a comparator with an internal threshold and with the OCMx input. A OCMx voltage higher than 2.4V creates a logic low at CLLx, and a OCMx voltage lower than 1.43V creates a logic high at CLLx. The comparator has an internal hysteresis of typically 0.4V. With the pull-down resistor ROCMx = 750 at OCMx, the correct OUTx-current threshold related to the logical output CLLx is ensured. The CLLx is low if the OUTx-current is higher than 27.3 mA, and the CLLx is "high", if the OUTx-current is lower than 19.1 mA. The comparator has an internal hysteresis of typically 5 mA. The tolerance of the ROCM resistor is assumed to be 0%. The CLL pin is an open-collector output and needs a pull-up resistor of typically 2 k to the 5-V supply. For ESD protection, a 7-V Zener diode is implemented.
3.6
RETURN 1, RETURN 2
The RETURNx pin provides a low-ohmic connection to GND via a switched open-collector NPNtransistor. If ENABLEx is high, RETURNx is switched on with a saturation voltage of less than 0.5V at IRETURNx 50 mA. If ENABLEx is low or open, RETURNx is a current sink with 2 mA. RETURNx is current-limited at typically 150 mA.
3.7
SC
The smooth capacitor is designed to realize the long-time constant for the slow voltage change at OUTx for both interface channels. The capacity is typically 22 nF. At the rising edge of VBatt, the maximum slew rate is VOUTx = 5 V/ms, and at the falling edge of VBatt, the maximum slew rate is VOUTx = 10 V/ms.
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3.8
GND Pins
A GND bond from the chip to pin 1 and pin 8 provides high ground breakage security and the lowest voltage drop and ground shift between the IC and circuit ground. The four GND pins and the die pad are directly connected to the copper leadframe, resulting in a very low thermal resistance, RthJC. To also achieve a low ambient thermal resistance (RthJA) it is recommended metal parts of the housing be connected in a proper way with the GND pins.
3.9
Power Dissipation
Worst case calculation of the supply current IS: IS = 1.278 x (IOUT1 + IOUT2) + 18 mA
Worst case calculation of the IC's power dissipation PV: PV = (VS x IS) - [(VS - Vdiff - Vret-sat) x (IOUT1 + IOUT2) + ROCM x ((IOUT12 + IOUT22)/81)]
VS = Supply voltage (5.7 to 25V) Vdiff = VS to VOUTx voltage difference Vdiff = 3.6 V at 12 V VS 25V Vdiff = 0.8 V at 5.7 V VS 8.5V Vret-sat = 0.5 V saturation voltage return IOUTx = output current at pin OUTx = 0 to 60 mA ROCM = resistor at pin OCMx An integrated overtemperature protection generates a switch-off signal at a chip temperature of typically Tj = 160C and a switch-on signal at typically Tj = 150C. If overtemperature is detected, only the corresponding channel will be disabled. The other channel stays enabled. The RETURNx is switched off if the voltage at RETURNx exceeds 2V (short-circuit comparator threshold) and overtemperature is detected. The OUTx is switched off if the voltage at OCMx is higher than 4.6V (overcurrent detection level) and overtemperature is detected. The OCM voltage monitors the output current at OUTx via the current ratio of 0.1. The overcurrent-detection level of OUTx can be varied by changing the OCMx resistor. If OUTx is switched off by overtemperature and overcurrent detection, the CLLx output remains a logic low (overcurrent). As the IC is only overtemperature-protected against short-circuit conditions at RETURNx or OUTx, it has to be checked in each application that the chip temperature does not exceed Tjmax = 150C in normal operation.
3.10
Test Hint
The overtemperature signal can be activated by connecting ENABLE1 or ENABLE2 to 9V/10 mA.
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4. Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Supply voltage Voltage at pins CLL1, CLL2, ENABLE1, ENABLE2 Voltage at SC Voltage at OCM1, OCM2 Voltage at RETURN1, RETURN2 Voltage at OUT1, OUT2 Current at supply (both channels OUTx and RETURNx shorted) Current at logical pins: CLL1, CLL2 ENABLE1, ENABLE2 Current at SC (SC related to GND or VBatt) Current at pins to external unit OUT1, OUT2, RETURN1, RETURN2 ESD classification Human body model (100 pF, 1.5 k) Machine model (200 pF, 0.0) Ambient temperature range Junction temperature range Storage temperature range All pins Tamb Tj Tstg VSC VOCMx VRETURNx VOUTx IS ICCLx IENABLEx ISC -110 Internally limited Symbol VS Min. -0.6 -0.3 -0.3 -0.3 -1 -1 Max. 40 6 30 6.8 27 40 240 3 0.1 220 Unit V V V V V V mA mA mA A
2000 200 -40 -40 -55 95 150 125
V V C C C
5. Thermal Resistance(1)
Parameters Junction case Note: Symbol RthJC Value 36 Unit K/W
1. A good ambient thermal resistance junction (RthJA = 65 K/W) can be achieved by using a big pad size for ground connection near a metal component (see section "GND Pins" on page 6)
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6. Electrical Characteristics
Tamb = -40C to +95C and Tj = -40C to +150C, Operation supply-voltage range VS = 5.7V to 18V continuously, VS 25V for maximum 25 min, VS 40V for up to 500 ms. The current values are based on R = 750, 0%-resistor at OCM1/OCM2 pins. Parameters Test Conditions Outputs disabled, VS 18V Outputs disabled, VS 40V One output enabled, VS 18V Both outputs enabled, VS 18V Supply Current Tj 125C Output load 2 x 15 mA, VS 18V Output load 2 x 28 mA, VS 18V Output load 2 x 50 mA, VS 18V Output load 2 x 60 mA, VS 18V (Tj > 125C) Both channels OUTx and RETURNx shorted, VS 18V Function SC Voltage at SC Voltage at SC Maximal voltage at SC SC-discharge current SC-charge current VS = 5.7V VS = 12.5V VS = 40V Voltage SC = VSC - 3V 5.7V VS 40V Voltage SC = VSC - 3V 5.7V VS 40V IOUTx = 5 to 50 mA 5.7V VS 8.5V 12V VS 25V 8.5V VS 11.3V VS = 40V VS 40V, IOUTx = 5 to 15 mA VS 25V, IOUTx = 15 to 50 mA VS 40V, IOUTx = 15 to 50 mA VS 40V IOUT = 15 to 50 mA VS 40V IOUT = 15 to 50 mA VS 18V VS 40V Tj < 125C Overcurrent detection level Tj 125C Always valid: current limitation is higher than overcurrent detection VS = 14V, OCMx shorted to GND VSC VSC VSCmax ISC_dis ISC_ch 33 -58 5.1 9 5.3 9.4 30 82 -20 V V V A A Symbol IS IS IS IS IS IS IS IS IS Min. Typ. Max. 8 14 13 18 56 90 146 171 200 Unit mA mA mA mA mA mA mA mA mA
Function OUT1 and OUT2 (See Figure 3-1 on page 4) Voltage difference, VS to VOUTx Output voltage OUTx Maximal voltage at OUTx Current mirror ratio, IOCMx/IOUTx Linearity of mirror ratio IOCMx/IOUTx Dynamic resistance OUTx Dynamic resistance OUTx + RETURNx OUTx current limitation (OUTx short to GND) Vdiff_low Vdiff_high VOUT_med VOUT_max IOUT_ratio Ratio_lin ROUT RDyn IOUT_lim IOUT_det IOUT_det IOUT_max 0.3 2.6 7.7 25 0.09 0.10 0.097 -5 2 4 -80 -105 -70 -60 30 0.12 0.11 0.11 5 12 15 -60 -60 -51 -51 % mA mA mA mA 0.8 3.6 V V V V
Maximum OUTx current (OUTx short to GND)
-140
-85
mA
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6. Electrical Characteristics (Continued)
Tamb = -40C to +95C and Tj = -40C to +150C, Operation supply-voltage range VS = 5.7V to 18V continuously, VS 25V for maximum 25 min, VS 40V for up to 500 ms. The current values are based on R = 750, 0%-resistor at OCM1/OCM2 pins. Parameters Leakage current at disabled OUTx Leakage voltage at disabled OUTx Internal pull-down current Supply rejection ratio Supply rejection ratio Minimum capacity at OUTx for phase margin Switching on ENABLE = 1 to 90% VOUT reached Switching off ENABLE = 0 to 10% VOUT reached CLLx low-level voltage threshold CLLx high-level voltage threshold Voltage hysteresis IOUT = 0 to 5 mA VS 40V, OUTx short to GND VS 40V VOCM_lim - VOCM_over Test Conditions OUTx short to GND, VS 25V OUTx short to GND, VS 38.5V OUTx open, VS 38.5V VS 18V VS 40V VSC = 7.6V Variation of VS = 8.4V to 40V in 10 ms Symbol IOUT_leak VOUT_leak IOUT_sink Vrej_mV Vrej_dB COUT_min Enable_on Enable_off 51.9 33 3 30 30 100 1.8 2.5 Min. -0.02 -12 4.3 4 4.5 80 Typ. Max. Unit mA mA V mA mA mV dB nF s s
Delay time with Cout = 47 nF Function OCM1, OCM2 Voltage threshold CLL-comparator Minimum voltage at OCMx Current-limitation level Overcurrent-detection level Current limitation minus overcurrent detection Internal pull-down current Function RETURN1, RETURN2 Enable high saturation voltage Dynamic resistance Current limitation RETURNx is always higher than current limitation OUTx
VCLL_L VCLL_H VCLL_hys VOCM_min VOCM_lim VOCM_det _lim_OCM IOCM_sink
1.75 1.43 0.26 4.3 4.2 0.15 0.1
2.4 1.9 0.6 0.5 5.3 4.9 0.5 0.45 0.5
V V V V V V V mA V mA mA mA V V V s s
IRETURN = 50 mA dI 10 mA Enable high, VRETURNx = 2V Enable high, VRETURNx 18V Enable low, VRETURNx 18V Threshold comparator, switch-off return Threshold comparator, switch-on return Hysteresis Switching on IRETURN at 50 mA Switching off IRETURN at 1 mA ROCM = 750 CLL low-level threshold CLL high-level threshold Hysteresis ICLL 2.5 mA VCLL 6.5V
Vret_sat Rret Iret_lim Iret_lim Iret_low Vret_low Vret_high Vret_hys tdRet_on tdRet_off 2 60 70 0.8 1.4 1.1 0.2 3 30
8 150 200 2 2 1.5 0.7 30 90
Overcurrent-detection level
Delay time CRETURN = 47 nF
Function CLL1, CLL2 (CLLx with 2 k to 5V) ICLL_L ICLL_H ICLL_hys VCLL_sat ICLL_leak 23.3 19.1 3.5 27.3 22.3 8.2 0.4 1 mA mA mA V A
IOUT threshold CLL comparator CLL saturation voltage CLL leakage current
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6. Electrical Characteristics (Continued)
Tamb = -40C to +95C and Tj = -40C to +150C, Operation supply-voltage range VS = 5.7V to 18V continuously, VS 25V for maximum 25 min, VS 40V for up to 500 ms. The current values are based on R = 750, 0%-resistor at OCM1/OCM2 pins. Parameters Test Conditions IOUT to CLL rise IOUT to CLL fall Maximum difference between rise and fall time Rise Fall Symbol tCll_rise tCll_fall t-rise-fall tCLL_rise tCLL-fall 60 500 VEnable_on VEnable_off IEnable 2 -0.3 10 6.5 +0.8 100 Min. 0.1 0.1 Typ. Max. 2 2 1 1 1 Unit s s s s s kHz kHz V V A
Response time to current change
CLL output switching speed Current transmission rate Current transmission 3 dB bandwidth Function ENABLE1, ENABLE2 Enable high-level threshold Enable low-level threshold Enable input pull-down current (to ensure output disabled during power-off and reset of microcontroller) Power Dissipation
Power dissipation 1 Tj 125C
VS = 18V, IOUT1 = 28 mA, IOUT2 at overcurrent detection level or IOUT2 = 28 mA, IOUT1 at overcurrent detection level VS = 18V, IOUT1 = IOUT2 = 28 mA
Pdis1
1
W
Power dissipation 2 Tj 125C
Pdis2
0.75
W
Selective Overtemperature Protection Logic AND connected with overcurrent Switch off detection Switch on (RETURNx, OUTx) Hysteresis Time delay until overtemperature shut-down VS = 25V, Tamb = 125C OUT1 = OUT2 = GND Temp_off Temp_on Temp_hys tdel 155 145 5 100 165 155 20 C C C ms
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7. Timing Diagrams
Figure 7-1. Variation of Power Supply
VS 14.0 V 12.0 V
VSC
10.7 V 8.7 V 0.4 ms 0.2 ms
VOUTx 10.7 V 8.7 V
t
Figure 7-2.
Overcurrent Protection
VENABLEx 5.0 V IOUTx 75 mA
overcurrent overtemperature shut down 100 ms
overcurrent
overcurrent
15 mA VCLLx 5.0 V
Pause/pulse for example
150 ms
75 ms
t
(Pulse/pause time depends on power disipation and RthJA)
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Figure 7-3.
Data Transmission
VENABLEx 30 s 13 V 200 mV overcurrent charge time COUT = 47 nF overcurrent current modulation from sensor 50 s
VOUTx
discharge of COUT = 47 nF with internal current
60 mA IOUTx 40 mA 10 mA VOCMx 4.7 V 3.0 V 0.75 V VCLLx 5.0 V 0V
150 s
t
Figure 7-4.
Application Circuit
+VBatt 100 nF VCC = 5 V 22 mF 4 14 15 I/O 13 750 VCC = 5 V Enable1 OCM1 Return1 2 47 nF VS CLL1 Out1 3 47 nF
Sensor 1
5V
I/O
Microcontroller
Interface1
U6268B
Out2 5 11 10 12 CLL2
Sensor 2
5V
I/O I/O
Interface2
Enable2 OCM2 GND 1, 8, 9, 16 Return2 SC 6 22 nF 7
47 nF
750
47 nF
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8. Ordering Information
Extended Type Number Package Remarks
U6268B-MFPG3Y
SO16
Taped and reeled, Pb-free
9. Package Information
Package SO16
Dimensions in mm
10.0 9.85 5.2 4.8 3.7
1.4 0.4 1.27 8.89 16 9 0.25 0.10 0.2 3.8 6.15 5.85
technical drawings according to DIN specifications
1
8
10. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document.
Revision No. History
4808B-AUTO-09/05
* Put datasheet in a new template * Pb-free logo on page 1 added * Table "Ordering Information" on page 13 changed
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